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Guide for Describing Materials Properties for a 300 mm 3DS-IC Wafer Stack (D5173D)

Page Created:
June 16, 2011
14:50 EDT

Page Updated:
April 11, 2013
15:08 EDT

Page Version:
25 of 25

Version Author:
Rich Allen

 


Rationale: Current wafer standards (SEMI M1) do not adequately address the needs of wafers used in bonded wafer stacks. Wafer thickness, edge bevel, notch, mass, bow/warp and diameters are changed when wafer stacks are bonded together, or wafer stacks bonded and thinned. These deviations from wafer parameters specified in SEMI M1 have numerous impacts in other equipment and hardware standards that reference SEMI M1, and SEMI drives a new standard to reflect wafer parameters associated with bonded and bonded/thinned wafer stacks.

This document will be balloted in Cycle 3 or Cycle 4, 2013, modified to address the negatives raised in the ballot of 5173C. 

Organization: SEMI

Domain: Mfg/Process
Activity Type: : New Standard/Document (5173D)
Committee: 3DS-IC
Task Force: Bonded Wafer Stacks (BWS)

Links: 

Organizing Document

Ongoing Activities

Ballot page

Key Contact: Richard Allen