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Guide for Metrology Techniques to be used in Measurement of Geometrical Parameters of Through-Silicon Vias (TSVs) in 3DS-IC Structures (D5410)

Page Created:
June 16, 2011
18:20 EDT

Page Updated:
April 11, 2013
15:09 EDT

Page Version:
18 of 18

Version Author:
Rich Allen

 


Rationale: This Guide will assist the user in selection and use of TSV metrology tools, as well as a protocol for performing TSV measurements of geometrical parameters of an individual TSV, or of an array of TSV’s, such as pitch, top CD, top diameter, top area, depth, taper (or sidewall angle), bottom area, bottom CD, bottom diameter, and possibly others (e.g. scalloping and overall tilt). This guide will address the various metrology techniques that are currently available that enable TSV measurements used for 3DS-IC packaging. New TSV dimensions with higher aspect ratios and smaller diameters may challenge TSV metrology techniques. The Guide will provide examples of measurements in TSV’s at different aspect ratios, TSV measurement limits for a variety of metrology tools, the relative levels of substrate interaction, and recommendations by application. Subsequently this guide can assist producers and users of TSV metrology to develop products and conduct meaningful evaluations.

NOW!  BALLOT PASSED and APPROVED AT THE SEMI 2013 SPRING STANDARDS MEETINGS

Organization: SEMI
Domain: Metrology
Activity Type: New Standard/SNARF
Committee: 3DS-IC
Task Force: Inspection and Metrology

Links: 

Organizing Document

Ongoing Activities

Key Contact: Victor Vartanian